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 CHA2295
6 - 11GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC Description
The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
IN OUT 1
Vd Vg
The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Typical on wafer measurements : Gain (dB)
20
OUT 2
Main Features
Broadband performance : 6 -11GHz 14dBm saturated output power. 18dB 1.5dB gain flatness Good broadband matching Low DC power consumption, 160mA @ 3.5V Chip size : 2.26 X 1.33 X 0.10 mm
19 18 17 16 15 14 13 12 11 10 1 2 3 4 5 6 7 Gain channel 1 Gain channel 2
Main Characteristics
Tamb. = 25C Symbol
Fop G Psat Id_small signal
8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Parameter
Operating frequency range Small signal gain Saturated Output power Bias current
Min
6 15 12
Typ
18 14 160
Max
11
Unit
GHz dB dBm
220
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22952240 28-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2295
6 -11GHz Buffer Splitter Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V Vg tuned for Id=160mA Symbol
Fop G G Is Ic Psat VSWRin VSWRout
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Isolation between channels (1) Saturated output power (1) Input VSWR (1) Output VSWR (1)
Min
6 15
Typ
Max
11
Unit
GHz dB dB dB dB dBm
18 1.5 60 18
+12
+14 2.0:1 2.3:1 160 220
Id_small signal Bias current
mA
(1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vds Ids Vgs Vdg Pin Tch Ta Tstg
Parameter
Maximum Drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage (Vd - Vg)) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range
Values
4.0 250 -2.5 to +0.4 +5 +15 +175 -40 to +85 -55 to +125
Unit
V mA V V dBm C C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA22952240 28-Aug.-02
2/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 -11GHz Power splitter Amplifier
CHA2295
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions : Channel Freq. GHz
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Vd = 3.5 Volt, Vg tuned for Id = 160 mA. S11 dB
-9,99 -11,40 -14,42 -19,39 -28,83 -26,94 -20,17 -18,51 -16,84 -15,80 -15,24 -14,62 -14,29 -14,07 -14,04 -13,77 -13,67 -13,20 -10,10 -11,46 -14,44 -19,27 -28,28 -28,07 -20,74 -18,43 -16,88 -15,77 -15,15 -14,66 -14,25 -14,09 -13,95 -13,72 -13,55 -13,12
S11 /
-23,19 -51,53 -77,32 -95,22 -89,06 -0,66 -3,25 -12,26 -26,16 -37,72 -49,47 -59,20 -69,08 -78,21 -88,72 -98,10 -107,19 -114,33 -23,68 -52,43 -78,77 -97,85 -100,60 -1,39 -3,71 -12,22 -24,60 -36,35 -48,51 -58,74 -67,59 -77,41 -87,81 -97,30 -106,71 -113,49
S12 dB
-78,40 -71,37 -67,59 -68,52 -73,27 -72,47 -82,66 -72,76 -85,35 -85,69 -74,62 -70,58 -75,31 -69,21 -85,79 -66,52 -72,49 -65,66 -66,30 -67,31 -68,69 -65,70 -67,02 -72,18 -75,81 -79,88 -74,94 -73,11 -82,43 -76,73 -82,52 -76,72 -66,25 -64,01 -66,64 -63,02
S12 /
10,36 40,66 -20,60 -83,56 -117,11 -165,16 -122,79 146,76 -114,68 141,79 173,34 -96,70 128,54 178,28 167,97 175,66 149,93 142,16 93,30 28,79 -62,91 -119,11 -145,17 -160,35 -179,95 69,33 45,88 -8,56 24,00 90,61 -148,65 -166,31 -179,04 -169,58 -154,56 -159,40
S21 dB
-39,63 -18,91 -0,96 10,46 15,86 18,12 18,91 18,64 18,12 18,15 17,21 16,66 16,03 15,09 14,48 13,87 13,10 12,59 -39,21 -18,83 -1,06 10,39 15,87 18,27 19,04 18,74 18,36 18,37 17,50 17,01 16,33 15,50 15,04 14,55 13,82 13,27
S21 /
-173,20 151,80 96,83 17,07 -58,60 -122,96 -176,92 138,91 101,55 65,89 35,53 8,26 -17,92 -42,30 -63,68 -85,83 -107,30 -127,20 -173,66 148,76 96,10 17,00 -57,50 -121,68 -175,14 141,17 103,74 68,22 37,59 10,22 -14,57 -38,87 -60,92 -83,10 -104,53 -125,54
S22 dB
-0,23 -0,85 -2,75 -7,20 -16,28 -22,39 -14,77 -13,00 -11,93 -11,84 -11,55 -11,58 -11,65 -11,81 -12,01 -12,31 -12,64 -12,86 -0,15 -0,82 -2,73 -7,27 -16,20 -23,31 -15,12 -13,30 -12,12 -12,15 -11,99 -11,43 -11,97 -11,43 -11,19 -11,61 -12,21 -11,35
S22 /
-25,89 -55,20 -89,94 -127,32 -171,08 33,97 -9,33 -28,21 -42,62 -55,01 -66,76 -77,70 -88,23 -99,83 -109,75 -120,01 -133,87 -145,18 -25,79 -55,20 -89,32 -126,53 -169,15 32,29 -10,67 -29,59 -41,54 -51,48 -66,12 -74,91 -82,63 -96,13 -102,57 -114,19 -126,36 -140,14
Ref. : DSCHA22952240 28-Aug.-02
3/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2295
Bias Conditions :
6 -11GHz Buffer Splitter Amplifier
Typical On wafer Measurements
Vd = 3.5 Volt, Vg tuned for Id = 160 mA.
Gain for each channel versus frequency (dB)
20 19 18 17 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Gain channel 1 Gain channel 2
Isolation between channels versus frequency (dB)
35 33 31 29 27 25 23 21 19 17 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Ref. : DSCHA22952240 28-Aug.-02
4/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 -11GHz Power splitter Amplifier
CHA2295
Gain & Return Loss channel 1 versus frequency (dB)
18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
S21 S11 S22
Gain & Return Loss channel 2 versus frequency (dB)
18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
5/7 Specifications subject to change without notice
S21
S11
S22
Ref. : DSCHA22952240 28-Aug.-02
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2295
6 -11GHz Buffer Splitter Amplifier
Chip Assembly and Mechanical Data
RF Out 1 To Vd DC Drain supply feed 120pF
RF In 120pF
RF Out 2
To Vg DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended.
Bonding pad positions.
( Chip thickness : 100m. DC pads : 100*100 m. All dimensions are in micrometers )
Ref. : DSCHA22952240 28-Aug.-02
6/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 -11GHz Power splitter Amplifier
CHA2295
Ordering Information
Chip form : CHA2295-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA22952240 28-Aug.-02
7/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09


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